Vishay TrenchFET Type N-Channel MOSFET, 126 A, 100 V Enhancement, 8-Pin SO-8

This image is representative of the product range

Subtotal (1 reel of 3000 units)*

PHP208,032.00

(exc. VAT)

PHP232,995.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
3000 +PHP69.344PHP208,032.00

*price indicative

RS Stock No.:
228-2903
Mfr. Part No.:
SiR510DP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

54nC

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested

Related links