Vishay TrenchFET Type N-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin SO-8 SiR500DP-T1-RE3

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Subtotal (1 pack of 5 units)*

PHP616.71

(exc. VAT)

PHP690.715

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 45PHP123.342PHP616.71
50 - 95PHP111.008PHP555.04
100 - 245PHP99.91PHP499.55
250 - 995PHP89.916PHP449.58
1000 +PHP80.922PHP404.61

*price indicative

Packaging Options:
RS Stock No.:
228-2902
Mfr. Part No.:
SiR500DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

350.8A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.47mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

104.1W

Typical Gate Charge Qg @ Vgs

120nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 30 V MOSFET.

100 % Rg and UIS tested

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