Vishay E N-Channel Power MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB SiHP080N60E-GE3

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Subtotal 10 units (supplied in a tube)*

PHP2,241.05

(exc. VAT)

PHP2,509.98

(inc. VAT)

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Units
Per Unit
10 - 18PHP224.105
20 - 24PHP219.45
26 - 98PHP211.22
100 +PHP182.935

*price indicative

Packaging Options:
RS Stock No.:
228-2875P
Mfr. Part No.:
SiHP080N60E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220AB

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

42nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

227W

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 35A Continuous Drain Current - SiHP080N60E-GE3


This power MOSFET is a high-voltage, N-channel switching transistor intended for through-hole power applications where robust thermal and electrical performance are required. It operates across a wide ambient range, supports switching duties with moderate gate charge, and mounts in a TO-220AB package for straightforward heatsinking and assembly on conventional boards.

Features and Benefits:


• 650V drain rating enables high-voltage switching applications
• 35A continuous current capability supports substantial load currents
• 80mΩ Rds(on) minimises conduction losses during power transfer
• 227W maximum dissipation allows sustained power handling
• 42nC typical gate charge yields predictable switching energy
• ±30V gate tolerance permits wide drive voltage margins

Applications


• Suitable for mains-derived SMPS and PFC circuits
• Ideal for industrial motor drive inverter stages
• Used with high-voltage DC-DC converters in telecoms
• Can be used for switch-mode lighting and ballast systems
• Employed in battery-charging and energy-storage converters

What thermal range can the device tolerate in harsh environments?


It is rated to function from -55°C up to 150°C, permitting operation across industrial temperature extremes.

How is the device intended to be mounted and cooled?


The TO-220AB through-hole format accommodates direct heatsink attachment for effective thermal management and board-mounted power designs.

What gate drive limits should be observed during design?


Gate-source voltage must not exceed ±30V to avoid gate-oxide stress and ensure reliable switching.

Does the component suit low-voltage signal switching tasks?


Its 1.2V forward voltage and power-focused construction make it optimised for high-voltage power conversion rather than low-voltage signal switching.

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