Vishay E Type N-Channel MOSFET, 4.4 A, 800 V, 3-Pin TO-263 SIHB5N80AE-GE3

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Subtotal (1 pack of 10 units)*

PHP607.60

(exc. VAT)

PHP680.50

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP60.76PHP607.60
20 - 20PHP59.55PHP595.50
30 - 40PHP55.223PHP552.23
50 +PHP50.636PHP506.36

*price indicative

Packaging Options:
RS Stock No.:
225-9912
Mfr. Part No.:
SIHB5N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.3Ω

Typical Gate Charge Qg @ Vgs

16.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

62.5W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

10.67mm

Width

9.65 mm

Height

15.88mm

Standards/Approvals

No

Automotive Standard

No

The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

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