Infineon IPT010N08NM5 N-Channel MOSFET, 43 A, 80 V, 8-Pin HSOF IPT010N08NM5ATMA1
- RS Stock No.:
- 225-0582
- Mfr. Part No.:
- IPT010N08NM5ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (2 units, in packs of 2)*
PHP1,049.58
(exc. VAT)
PHP1,175.52
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Limited stock
- 10 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP524.79 | PHP1,049.58 |
| 10 - 98 | PHP481.245 | PHP962.49 |
| 100 - 248 | PHP444.235 | PHP888.47 |
| 250 - 498 | PHP412.305 | PHP824.61 |
| 500 + | PHP401.415 | PHP802.83 |
*price indicative
- RS Stock No.:
- 225-0582
- Mfr. Part No.:
- IPT010N08NM5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | IPT010N08NM5 | |
| Package Type | HSOF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.05mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.58mm | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series IPT010N08NM5 | ||
Package Type HSOF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.05mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 10.58mm | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
Infineon IPT010N08NM5 Series MOSFET, 80V Drain Source Voltage, 43A Continuous Drain Current - IPT010N08NM5ATMA1
This MOSFET is a semiconductor switching device designed for high-current, high-voltage applications in surface-mounted assemblies. It operates across a wide temperature span and is intended for power conversion, switching and drive circuits that require robust drain-source performance and substantial power handling.
Features and Benefits:
• Low on-resistance delivers reduced conduction losses at high currents
• High drain-source voltage enables operation at 80 V system rails
• High continuous drain current allows sustained 43 A load handling
• High power dissipation supports up to 375 W thermal loading
• Typical gate charge of 178 nC permits predictable switching energetics
• High drain-source voltage enables operation at 80 V system rails
• High continuous drain current allows sustained 43 A load handling
• High power dissipation supports up to 375 W thermal loading
• Typical gate charge of 178 nC permits predictable switching energetics
Applications
• Suitable for DC-DC converter switching stages
• Ideal for motor-drive half-bridge configurations
• Used with power supplies requiring high current handling
• Can be used for synchronous rectification in converters
• Ideal for motor-drive half-bridge configurations
• Used with power supplies requiring high current handling
• Can be used for synchronous rectification in converters
What gate voltage limits must be observed during circuit design?
The gate must not be driven beyond a maximum of 20 V to avoid gate-source overstress.
What thermal environment range can it withstand in operation?
It is specified to function from −55 °C up to 175 °C enabling use across extreme temperature conditions.
How many pins are available for PCB routing and connections?
There are eight pins for layout and electrical connection in the surface-mount footprint.
What package type should be accounted for when designing the PCB footprint?
The component uses an HSOF package intended for surface mounting and board attachment.
What is the typical conduction resistance to consider for efficiency calculations?
Expect a maximum drain-source resistance of around 1.05 mΩ for loss estimations.
Related links
- Infineon IPT010N08NM5 N-Channel MOSFET 80 V, 8-Pin HSOF
- Infineon IPT N-Channel MOSFET 80 V, 8-Pin HSOF-8 IPT013N08NM5LFATMA1
- Infineon IAUT N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF
- Infineon IAUT N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF
- Infineon IAUT N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF IAUT165N08S5N029ATMA2
- ROHM RS1 Type P-Channel MOSFET 80 V Enhancement, 8-Pin HSOP-8 RS1N110ATTB1
- Infineon IAUT N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF IAUT300N08S5N012ATMA2