ROHM Dual 2 Type P-Channel MOSFET, 2.5 A, 60 V Enhancement, 7-Pin DFN UT6JC5TCR
- RS Stock No.:
- 223-6398
- Mfr. Part No.:
- UT6JC5TCR
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP872.20
(exc. VAT)
PHP976.875
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 15, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP34.888 | PHP872.20 |
| 50 - 75 | PHP33.841 | PHP846.03 |
| 100 - 225 | PHP31.811 | PHP795.28 |
| 250 - 975 | PHP28.949 | PHP723.73 |
| 1000 + | PHP25.475 | PHP636.88 |
*price indicative
- RS Stock No.:
- 223-6398
- Mfr. Part No.:
- UT6JC5TCR
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 2.8Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Length | 2mm | |
| Width | 2 mm | |
| Height | 0.65mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 2.8Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Length 2mm | ||
Width 2 mm | ||
Height 0.65mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM small signal MOSFET has DFN1010-3W package type. It is mainly used for switching circuits, high side loadswitch and relay driver.
Leadless ultra small and exposed drain pad for excellent thermal conduction SMD plastic package
Side wettable Flanks for automated optical solder inspection
AEC-Q101 qualified
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