Infineon IPN70R Type N-Channel MOSFET, 3 A, 700 V Enhancement, 3-Pin SOT-223

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Subtotal (1 reel of 3000 units)*

PHP35,868.00

(exc. VAT)

PHP40,173.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 - 3000PHP11.956PHP35,868.00
6000 - 6000PHP11.597PHP34,791.00
9000 +PHP11.249PHP33,747.00

*price indicative

RS Stock No.:
222-4921
Mfr. Part No.:
IPN70R2K0P7SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

700V

Series

IPN70R

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

6W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

3.8nC

Maximum Operating Temperature

150°C

Height

1.8mm

Width

3.7 mm

Standards/Approvals

No

Length

6.7mm

Automotive Standard

No

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Enabling lower MOSFET chip temperature

Leading to higher efficency compared to previous technologies

Allowing improved form factors and slim designs

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