Infineon IPL60R Type N-Channel MOSFET, 17 A, 600 V Enhancement, 5-Pin ThinPAK
- RS Stock No.:
- 222-4913
- Mfr. Part No.:
- IPL60R125C7AUMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP384,465.00
(exc. VAT)
PHP430,602.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from January 04, 2027
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Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP128.155 | PHP384,465.00 |
| 6000 - 6000 | PHP124.31 | PHP372,930.00 |
| 9000 + | PHP120.581 | PHP361,743.00 |
*price indicative
- RS Stock No.:
- 222-4913
- Mfr. Part No.:
- IPL60R125C7AUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPL60R | |
| Package Type | ThinPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 103W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 8.1 mm | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPL60R | ||
Package Type ThinPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 103W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 8.1 mm | ||
Length 8.1mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
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