Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252 IPD60R180C7ATMA1
- RS Stock No.:
- 222-4902
- Mfr. Part No.:
- IPD60R180C7ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP754.60
(exc. VAT)
PHP845.15
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,495 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP150.92 | PHP754.60 |
| 10 - 95 | PHP138.344 | PHP691.72 |
| 100 - 245 | PHP127.738 | PHP638.69 |
| 250 - 495 | PHP118.614 | PHP593.07 |
| 500 + | PHP115.412 | PHP577.06 |
*price indicative
- RS Stock No.:
- 222-4902
- Mfr. Part No.:
- IPD60R180C7ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | IPD50R | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 68W | |
| Forward Voltage Vf | 0.9V | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series IPD50R | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 68W | ||
Forward Voltage Vf 0.9V | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Height 2.41mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Enables increasing switching frequency without loss in efficiency
Measure showing key parameter for light load and full load efficiency
Doubling the switching frequency will half the size of magnetic components
Smaller packages for same R DS(on)
Can be used in many more positions for both hard and soft switching topologies
Related links
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 10-Pin TO-252
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 10-Pin TO-252 IPDD60R190G7XTMA1
- Infineon IPD50R Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252
- Infineon IPD50R Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252 IPD50R800CEAUMA1
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK IPL60R060CFD7AUMA1