Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 222-4899
- Mfr. Part No.:
- IPD50R800CEAUMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
PHP43,597.50
(exc. VAT)
PHP48,830.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 5,000 unit(s) shipping from December 26, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | PHP17.439 | PHP43,597.50 |
| 5000 - 5000 | PHP16.915 | PHP42,287.50 |
| 7500 + | PHP16.408 | PHP41,020.00 |
*price indicative
- RS Stock No.:
- 222-4899
- Mfr. Part No.:
- IPD50R800CEAUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IPD50R | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12.4nC | |
| Maximum Power Dissipation Pd | 40W | |
| Forward Voltage Vf | 0.83V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IPD50R | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12.4nC | ||
Maximum Power Dissipation Pd 40W | ||
Forward Voltage Vf 0.83V | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Reduced energy stored in output capacitance (E oss)
High body diode ruggedness
Reduced reverse recovery charge (Q rr )
Reduced gate charge (Q g )
Related links
- Infineon IPD50R Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252 IPD50R800CEAUMA1
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R180C7ATMA1
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 10-Pin TO-252
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 10-Pin TO-252 IPDD60R190G7XTMA1
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK IPL60R060CFD7AUMA1