Infineon IMZ1 Type N-Channel MOSFET, 52 A, 1200 V Enhancement, 4-Pin TO-247

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Bulk discount available

Subtotal (1 tube of 30 units)*

PHP22,398.15

(exc. VAT)

PHP25,085.94

(inc. VAT)

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  • 330 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
30 - 60PHP746.605PHP22,398.15
90 - 120PHP724.207PHP21,726.21
150 +PHP702.481PHP21,074.43

*price indicative

RS Stock No.:
222-4864
Mfr. Part No.:
IMZ120R045M1XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

IMZ1

Pin Count

4

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.

Best in class switching and conduction losses

Benchmark high threshold voltage, Vth > 4 V

0V turn-off gate voltage for easy and simple gate drive

Wide gate-source voltage range

Robust and low loss body diode rated for hard commutation

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