Infineon Dual FF6MR 1 Type N-Channel MOSFET, 250 A, 1200 V Enhancement AG-62MM FF6MR12KM1BOSA1
- RS Stock No.:
- 222-4796
- Mfr. Part No.:
- FF6MR12KM1BOSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP40,761.97
(exc. VAT)
PHP45,653.41
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 28 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | PHP40,761.97 |
| 10 - 99 | PHP39,539.10 |
| 100 - 249 | PHP37,957.53 |
| 250 - 499 | PHP36,059.66 |
| 500 + | PHP33,896.08 |
*price indicative
- RS Stock No.:
- 222-4796
- Mfr. Part No.:
- FF6MR12KM1BOSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 250A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | FF6MR | |
| Package Type | AG-62MM | |
| Mount Type | Chassis | |
| Maximum Drain Source Resistance Rds | 5.81mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 20mW | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 5.85V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 250A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series FF6MR | ||
Package Type AG-62MM | ||
Mount Type Chassis | ||
Maximum Drain Source Resistance Rds 5.81mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 20mW | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 5.85V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Infineon 62 mm 1200 V, 6 mΩ half bridge module with Cool Sic™ MOSFET.
High current density
Low switching losses
Superior gate oxide reliability
Highest robustness against humidity
Robust integrated body diode, and thus optimal thermal conditions
Related links
- Infineon Dual FF6MR 1 Type N-Channel MOSFET 1200 V Enhancement AG-62MM
- Infineon FF6MR Type N-Channel MOSFET 1200 V Enhancement AG-EASY2B FF6MR20W2M1HB70BPSA1
- Infineon Dual HEXFET 1 Type N-Channel MOSFET 50 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel MOSFET Arrays 30 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel Power MOSFET 20 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SO-8
- Infineon Dual OptiMOS 1 Type P 2.3 A 6-Pin TSOP