Infineon CoolMOS Type N-Channel MOSFET, 109 A, 600 V Enhancement, 4-Pin TO-247 IPZ60R017C7XKSA1

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10 - 99PHP798.02
100 - 249PHP774.07
250 - 499PHP750.85
500 +PHP728.32

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Packaging Options:
RS Stock No.:
222-4727
Mfr. Part No.:
IPZ60R017C7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

109A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

CoolMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

17mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

240nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

446W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

5.21 mm

Height

21.1mm

Length

16.13mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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