Infineon CoolMOS Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin VSON IPL60R185C7AUMA1

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Subtotal (1 pack of 5 units)*

PHP740.52

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PHP829.38

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Units
Per Unit
Per Pack*
5 - 5PHP148.104PHP740.52
10 - 95PHP135.57PHP677.85
100 - 245PHP125.158PHP625.79
250 - 495PHP116.234PHP581.17
500 +PHP113.048PHP565.24

*price indicative

Packaging Options:
RS Stock No.:
222-4683
Mfr. Part No.:
IPL60R185C7AUMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

650V

Package Type

VSON

Series

CoolMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

185mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

77W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Height

1.1mm

Standards/Approvals

No

Width

8.1 mm

Length

8.1mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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