Infineon OptiMOS-TM3 Type N-Channel MOSFET, 114 A, 40 V Enhancement, 8-Pin TSDSON BSZ028N04LSATMA1

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PHP644.10

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PHP721.35

(inc. VAT)

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Per Pack*
15 - 15PHP42.94PHP644.10
30 - 75PHP39.383PHP590.75
90 - 225PHP36.368PHP545.52
240 - 465PHP33.774PHP506.61
480 +PHP32.809PHP492.14

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Packaging Options:
RS Stock No.:
222-4627
Mfr. Part No.:
BSZ028N04LSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

114A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS-TM3

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

32nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

63W

Maximum Operating Temperature

150°C

Height

1.2mm

Width

6.1 mm

Standards/Approvals

No

Length

5.35mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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