Infineon OptiMOS-TM5 Type N-Channel MOSFET, 131 A, 80 V Enhancement, 8-Pin TDSON

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Subtotal (1 reel of 5000 units)*

PHP311,175.00

(exc. VAT)

PHP348,515.00

(inc. VAT)

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Units
Per Unit
Per Reel*
5000 - 5000PHP62.235PHP311,175.00
10000 - 10000PHP60.368PHP301,840.00
15000 +PHP58.557PHP292,785.00

*price indicative

RS Stock No.:
222-4617
Mfr. Part No.:
BSC037N08NS5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

131A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS-TM5

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

114W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

46nC

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

6.1 mm

Length

5.35mm

Height

1.2mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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