onsemi NVMFS5C Type N-Channel MOSFET, 277 A, 40 V Enhancement, 5-Pin DFN
- RS Stock No.:
- 221-6753
- Mfr. Part No.:
- NVMFS5C420NLWFT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1500 units)*
PHP173,044.50
(exc. VAT)
PHP193,810.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 1,500 unit(s), ready to ship from another location
Units | Per Unit | Per Reel* |
|---|---|---|
| 1500 - 1500 | PHP115.363 | PHP173,044.50 |
| 3000 - 3000 | PHP110.926 | PHP166,389.00 |
| 4500 + | PHP109.522 | PHP164,283.00 |
*price indicative
- RS Stock No.:
- 221-6753
- Mfr. Part No.:
- NVMFS5C420NLWFT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 277A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVMFS5C | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Maximum Power Dissipation Pd | 146W | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.1 mm | |
| Standards/Approvals | RoHS, AEC-Q101 and PPAP Capable | |
| Length | 6.3mm | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 277A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVMFS5C | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Maximum Power Dissipation Pd 146W | ||
Maximum Operating Temperature 175°C | ||
Width 1.1 mm | ||
Standards/Approvals RoHS, AEC-Q101 and PPAP Capable | ||
Length 6.3mm | ||
Height 5.3mm | ||
Automotive Standard No | ||
The ON Semiconductor automotive power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. It available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
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