onsemi NTP165N65S N-Channel MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 800 units)*

PHP130,766.40

(exc. VAT)

PHP146,458.40

(inc. VAT)

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  • Shipping from September 24, 2027
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Units
Per Unit
Per Tube*
800 - 800PHP163.458PHP130,766.40
1600 - 1600PHP157.171PHP125,736.80
2400 +PHP155.182PHP124,145.60

*price indicative

RS Stock No.:
221-6747
Mfr. Part No.:
NTP165N65S3H
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

650V

Series

NTP165N65S

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

165mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

35nC

Maximum Power Dissipation Pd

142W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

16.3mm

Length

10.67mm

Width

4.7mm

Standards/Approvals

RoHS

Automotive Standard

No

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 326 pF

100% avalanche tested

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