onsemi NTMT190N N-Channel MOSFET, 20 A, 650 V Enhancement, 4-Pin PQFN

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Packaging Options:
RS Stock No.:
221-6740P
Mfr. Part No.:
NTMT190N65S3HF
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

650V

Series

NTMT190N

Package Type

PQFN

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

34nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

162W

Maximum Operating Temperature

175°C

Height

8.1mm

Length

8.1mm

Standards/Approvals

No

Width

1.1mm

Automotive Standard

No

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 316 pF

100% avalanche tested

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