Infineon HEXFET Type N-Channel MOSFET & Diode, 77 A, 40 V Enhancement, 3-Pin TO-252 IRFR3504ZTRPBF
- RS Stock No.:
- 220-7494
- Distrelec Article No.:
- 304-39-422
- Mfr. Part No.:
- IRFR3504ZTRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP815.20
(exc. VAT)
PHP913.00
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 11,800 unit(s) shipping from August 31, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP81.52 | PHP815.20 |
| 20 - 90 | PHP74.648 | PHP746.48 |
| 100 - 240 | PHP68.892 | PHP688.92 |
| 250 - 490 | PHP64.096 | PHP640.96 |
| 500 + | PHP62.178 | PHP621.78 |
*price indicative
- RS Stock No.:
- 220-7494
- Distrelec Article No.:
- 304-39-422
- Mfr. Part No.:
- IRFR3504ZTRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 77A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 90W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 2.39mm | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 77A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 90W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 2.39mm | ||
Length 6.73mm | ||
Height 6.22mm | ||
Automotive Standard No | ||
The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
Silicon optimized for applications switching below <100kHz
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
High performance in low frequency applications
Related links
- Infineon HEXFET Type N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET & Diode 150 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET & Diode 30 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET & Diode 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET & Diode 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET & Diode 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRLPBF
- Infineon HEXFET Type N-Channel MOSFET & Diode 55 V Enhancement, 3-Pin TO-252 IRFR1010ZTRPBF
- Infineon HEXFET Type N-Channel MOSFET & Diode 150 V Enhancement, 3-Pin TO-252 IRFR24N15DTRPBF