Infineon HEXFET Type N-Channel MOSFET & Diode, 77 A, 40 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 220-7493
- Mfr. Part No.:
- IRFR3504ZTRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2000 units)*
PHP126,160.00
(exc. VAT)
PHP141,300.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 10,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | PHP63.08 | PHP126,160.00 |
| 4000 - 4000 | PHP61.188 | PHP122,376.00 |
| 6000 + | PHP59.352 | PHP118,704.00 |
*price indicative
- RS Stock No.:
- 220-7493
- Mfr. Part No.:
- IRFR3504ZTRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 77A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 90W | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.39 mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 77A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 90W | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 2.39 mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 6.22mm | ||
Automotive Standard No | ||
The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
Silicon optimized for applications switching below <100kHz
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
High performance in low frequency applications
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