Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-220 IPP80R900P7XKSA1

RS Stock No.:: 217-2572
Mfr. Part No.:: IPP80R900P7XKSA1
Manufacturer:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-220 IPP80R900P7XKSA1

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Subtotal (1 pack of 20 units)*

PHP1,567.50

(exc. VAT)

PHP1,755.60

(inc. VAT)

FREE delivery for orders over ₱3,000.00

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Units	Per Unit	Per Pack*
20 - 20	PHP78.375	PHP1,567.50
40 - 80	PHP71.799	PHP1,435.98
100 - 220	PHP66.287	PHP1,325.74
240 - 480	PHP61.57	PHP1,231.40
500 +	PHP59.843	PHP1,196.86

*price indicative

RS Stock No.:: 217-2572
Mfr. Part No.:: IPP80R900P7XKSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	800V
	Series	CoolMOS P7
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	900mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	45W
	Typical Gate Charge Qg @ Vgs	15nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Length	10.36mm
	Standards/Approvals	No
	Height	29.95mm
	Width	4.57 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 800V
	Series CoolMOS P7
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 900mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 45W
	Typical Gate Charge Qg @ Vgs 15nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Length 10.36mm
	Standards/Approvals No
	Height 29.95mm
	Width 4.57 mm
	Automotive Standard No

Datasheet - IPP80R900P7XKSA1

The Infineon 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss

Best-in-class DPAK R DS(on) of 280mΩ

Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-220 IPP80R900P7XKSA1

FREE delivery for orders over ₱3,000.00

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