Infineon IPP Type N-Channel MOSFET, 137 A, 100 V Enhancement, 3-Pin TO-220 IPP045N10N3GXKSA1

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Subtotal (1 pack of 10 units)*

PHP1,321.04

(exc. VAT)

PHP1,479.56

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP132.104PHP1,321.04
20 - 90PHP121.085PHP1,210.85
100 - 240PHP111.79PHP1,117.90
250 - 490PHP103.756PHP1,037.56
500 +PHP100.886PHP1,008.86

*price indicative

Packaging Options:
RS Stock No.:
217-2555
Mfr. Part No.:
IPP045N10N3GXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

137A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

IPP

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

214W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

88nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10.36mm

Standards/Approvals

No

Width

4.57 mm

Height

29.95mm

Distrelec Product Id

304-31-966

Automotive Standard

No

The Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).

Excellent switching performance World's lowest R DS(on)

Very low Q g and Q gd

Excellent gate charge x R DS(on) product (FOM)

RoHS compliant-halogen free

MSL1 rated 2

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