Infineon IPD Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-252 IPD80R360P7ATMA1
- RS Stock No.:
- 217-2534
- Mfr. Part No.:
- IPD80R360P7ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP1,257.70
(exc. VAT)
PHP1,408.60
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 2,130 unit(s) shipping from August 31, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP125.77 | PHP1,257.70 |
| 20 - 90 | PHP115.208 | PHP1,152.08 |
| 100 - 240 | PHP106.345 | PHP1,063.45 |
| 250 - 490 | PHP98.821 | PHP988.21 |
| 500 + | PHP96.03 | PHP960.30 |
*price indicative
- RS Stock No.:
- 217-2534
- Mfr. Part No.:
- IPD80R360P7ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 2.41mm | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Best-in-class FOM RDS(on)*Eoss; reduced Qg, Ciss, and Coss
Best-in-class DPAK RDS(on)
Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V
Integrated Zener Diode ESD protection
Fully optimized portfolio
Related links
- Infineon IPD Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R2K7C3AATMA1
- Infineon IPD Type N-Channel MOSFET 120 V Enhancement, 3-Pin PG-TO-252
- Infineon IPD Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252