Infineon IPD Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252 IPD80R2K7C3AATMA1
- RS Stock No.:
- 217-2532
- Mfr. Part No.:
- IPD80R2K7C3AATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP1,372.00
(exc. VAT)
PHP1,536.60
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 4,620 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP68.60 | PHP1,372.00 |
| 40 - 80 | PHP62.899 | PHP1,257.98 |
| 100 - 220 | PHP58.022 | PHP1,160.44 |
| 240 - 480 | PHP53.906 | PHP1,078.12 |
| 500 + | PHP52.385 | PHP1,047.70 |
*price indicative
- RS Stock No.:
- 217-2532
- Mfr. Part No.:
- IPD80R2K7C3AATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.7Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 42W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.7Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 42W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolMOS™ C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such as PHEVs and BEV.
Best-in-class quality and reliability
Higher breakdown voltage
High peak current capability
Automotive AEC Q101 qualified
Green package (RoHS compliant)
Related links
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- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252