Infineon CoolMOS Type N-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263 IPB80N04S2H4ATMA2

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Subtotal (1 pack of 5 units)*

PHP707.25

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PHP792.10

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 5PHP141.45PHP707.25
10 - 95PHP129.62PHP648.10
100 - 245PHP119.598PHP597.99
250 - 495PHP111.054PHP555.27
500 +PHP108.10PHP540.50

*price indicative

Packaging Options:
RS Stock No.:
217-2510
Mfr. Part No.:
IPB80N04S2H4ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

CoolMOS

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

129W

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

9.45 mm

Standards/Approvals

No

Length

10.31mm

Height

4.57mm

Automotive Standard

AEC-Q101

The Infineon 40V, N-Ch, 3.7 mΩ max, Automotive MOSFET, D2PAK, OptiMO.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Ultra low Rds(on)

100% Avalanche tested

Green product (RoHS compliant)

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