Infineon CoolMOS Type N-Channel MOSFET, 8.4 A, 600 V N, 3-Pin TO-220 IPAN60R800CEXKSA1
- RS Stock No.:
- 217-2499
- Mfr. Part No.:
- IPAN60R800CEXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP1,114.94
(exc. VAT)
PHP1,248.74
(inc. VAT)
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- Shipping from October 05, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP55.747 | PHP1,114.94 |
| 40 - 80 | PHP51.051 | PHP1,021.02 |
| 100 - 220 | PHP47.189 | PHP943.78 |
| 240 - 480 | PHP43.78 | PHP875.60 |
| 500 + | PHP42.568 | PHP851.36 |
*price indicative
- RS Stock No.:
- 217-2499
- Mfr. Part No.:
- IPAN60R800CEXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 20.5nC | |
| Maximum Power Dissipation Pd | 82W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.1mm | |
| Height | 29.87mm | |
| Width | 4.8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 20.5nC | ||
Maximum Power Dissipation Pd 82W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.1mm | ||
Height 29.87mm | ||
Width 4.8 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Related links
- Infineon CoolMOS Type N-Channel MOSFET 600 V N, 3-Pin TO-220
- Infineon CoolMOS CE Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-251
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- Infineon CoolMOS Type N-Channel MOSFET 650 V N, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 500 V N, 3-Pin TO-220 IPAN50R500CEXKSA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V N, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 650 V N, 3-Pin TO-220 IPA65R1K5CEXKSA1