Infineon OptiMOS 3 Type N-Channel MOSFET, 24 A, 250 V N, 8-Pin SuperSO BSC670N25NSFDATMA1
- RS Stock No.:
- 217-2483
- Mfr. Part No.:
- BSC670N25NSFDATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 5 units)*
PHP1,013.32
(exc. VAT)
PHP1,134.92
(inc. VAT)
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In Stock
- 4,995 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP202.664 | PHP1,013.32 |
| 10 - 95 | PHP197.598 | PHP987.99 |
| 100 - 245 | PHP192.656 | PHP963.28 |
| 250 - 495 | PHP187.838 | PHP939.19 |
| 500 + | PHP183.14 | PHP915.70 |
*price indicative
- RS Stock No.:
- 217-2483
- Mfr. Part No.:
- BSC670N25NSFDATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SuperSO | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.35mm | |
| Width | 5.49 mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SuperSO | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Length 6.35mm | ||
Width 5.49 mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.
N-channel, normal level
175 °C rated
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
Pb-free lead plating
RoHS compliant
Qualified according to JEDEC1) for target application
Halogen-free according to IEC61249-2-21
Ideal for high-frequency switching and synchronous rectification
Related links
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- Infineon OptiMOS Type N-Channel MOSFET 60 V N, 8-Pin SuperSO
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V N, 8-Pin SuperSO BSC117N08NS5ATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 150 V N, 8-Pin SuperSO
- Infineon OptiMOS 5 Type N-Channel MOSFET 150 V N, 8-Pin SuperSO BSC093N15NS5ATMA1
