Infineon CoolMOS P7 Type N-Channel MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-220 IPP80R450P7XKSA1

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Subtotal (1 pack of 10 units)*

PHP760.32

(exc. VAT)

PHP851.56

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP76.032PHP760.32
20 - 90PHP69.711PHP697.11
100 - 240PHP64.329PHP643.29
250 - 490PHP59.717PHP597.17
500 +PHP58.093PHP580.93

*price indicative

Packaging Options:
RS Stock No.:
215-2550
Mfr. Part No.:
IPP80R450P7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS P7

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

24nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

73W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.

Integrated Zener diode ESD protection up to Class 2 (HBM)

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