Infineon CoolMOS P7 Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-220 IPP60R099P7XKSA1

RS Stock No.:: 215-2539
Mfr. Part No.:: IPP60R099P7XKSA1
Manufacturer:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-220 IPP60R099P7XKSA1

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Subtotal (1 pack of 5 units)*

PHP1,117.20

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PHP1,251.25

(inc. VAT)

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In Stock

435 unit(s) ready to ship from another location

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Units	Per Unit	Per Pack*
5 - 5	PHP223.44	PHP1,117.20
10 - 95	PHP204.836	PHP1,024.18
100 - 245	PHP189.028	PHP945.14
250 - 495	PHP175.542	PHP877.71
500 +	PHP170.656	PHP853.28

*price indicative

RS Stock No.:: 215-2539
Mfr. Part No.:: IPP60R099P7XKSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolMOS P7
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	45nC
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	117W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	4.57mm
	Length	10.36mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 600V
	Series CoolMOS P7
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 45nC
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 117W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 4.57mm
	Length 10.36mm
	Automotive Standard No

Infineon CoolMOS™ P7 Series MOSFET, 31A Continuous Drain Current, 600V Drain Source Voltage - IPP60R099P7XKSA1

This MOSFET is a high-performance power component designed specifically for high-voltage applications. With a maximum continuous drain current of 31A and a maximum drain-source voltage of 600V, it is housed in a TO-220 package, making it suitable for through-hole mounting. Its exceptional specifications make it ideal for advanced electronic designs across various industries.

Features & Benefits

• Suitable for both hard and soft switching use

• Significantly reduces switching and conduction losses

• Excellent robust body diode for hard commutation

• High ESD protection exceeding 2kV for reliable performance

• Enhancement mode configuration simplifies circuit design

Applications

• Ideal for PFC (Power Factor Correction) stages

• Used in hard-switching PWM (Pulse Width Modulation)

• Applicable in resonant switching stages for various electronics

• Suitable for adapters and LCD/PDP TVs

• Utilised in lighting solutions, server equipment, and telecom systems

What is the significance of the low RDS(on) value in this device?

A low RDS(on) value of 0.099 ohm minimises conduction losses, enhancing the efficiency of power conversion in applications where heat generation is a concern.

How does its working temperature range impact its performance?

Operating effectively between -55°C and +150°C, it ensures reliability and stability even in extreme conditions, making it suitable for diverse environments.

Can it be used in parallel configurations?

Yes, for parallel configurations, the use of ferrite beads on the gate or separate totem poles is generally recommended to prevent oscillation and ensure stable operation.