Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 2.5 A, 800 V Enhancement, 3-Pin TO-252 IPD80R2K4P7ATMA1
- RS Stock No.:
- 215-2516
- Mfr. Part No.:
- IPD80R2K4P7ATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 20 units)*
PHP807.52
(exc. VAT)
PHP904.42
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,140 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP40.376 | PHP807.52 |
| 40 - 80 | PHP37.006 | PHP740.12 |
| 100 - 220 | PHP34.164 | PHP683.28 |
| 240 - 480 | PHP31.719 | PHP634.38 |
| 500 + | PHP30.861 | PHP617.22 |
*price indicative
- RS Stock No.:
- 215-2516
- Mfr. Part No.:
- IPD80R2K4P7ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | 800V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.4Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 22W | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series 800V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.4Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 22W | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio
Related links
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- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
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