Infineon OptiMOS Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SuperSO BSC034N03LSGATMA1
- RS Stock No.:
- 215-2459
- Mfr. Part No.:
- BSC034N03LSGATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
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View bulk pricing optionsSubtotal (1 pack of 20 units)*
PHP1,321.00
(exc. VAT)
PHP1,479.60
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Last RS stock
- Final 12,900 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP66.05 | PHP1,321.00 |
| 40 - 80 | PHP60.554 | PHP1,211.08 |
| 100 - 220 | PHP55.882 | PHP1,117.64 |
| 240 - 480 | PHP51.942 | PHP1,038.84 |
| 500 + | PHP50.477 | PHP1,009.54 |
*price indicative
- RS Stock No.:
- 215-2459
- Mfr. Part No.:
- BSC034N03LSGATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS™3 Power-MOSFET series has 30V maximum drain source voltage with SuperSO8 5x6 package type. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behaviour, as well as increased battery life. Available in half bridge configuration (power stage 5x6).
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel; Logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Superior thermal resistance
Related links
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- Infineon OptiMOS 5 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO
- Infineon OptiMOS 5 Type N-Channel MOSFET 25 V Enhancement, 8-Pin SuperSO
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO BSC054N04NSGATMA1