Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SuperSO

RS Stock No.:: 133-6576
Mfr. Part No.:: BSC009NE2LS5ATMA1
Manufacturer:: Infineon

Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SuperSO

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Subtotal (1 reel of 5000 units)*

PHP290,470.00

(exc. VAT)

PHP325,325.00

(inc. VAT)

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10,000 unit(s) ready to ship from another location

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Units	Per Unit	Per Reel*
5000 +	PHP58.094	PHP290,470.00

*price indicative

RS Stock No.:: 133-6576
Mfr. Part No.:: BSC009NE2LS5ATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	25V
	Series	OptiMOS 5
	Package Type	SuperSO
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.25mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	74W
	Maximum Gate Source Voltage Vgs	16 V
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	43nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Length	5.49mm
	Standards/Approvals	No
	Width	6.35 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 25V
	Series OptiMOS 5
	Package Type SuperSO
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.25mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 74W
	Maximum Gate Source Voltage Vgs 16 V
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 43nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Length 5.49mm
	Standards/Approvals No
	Width 6.35 mm
	Automotive Standard No

COO (Country of Origin):: MY

Infineon OptiMOS™ 5 Series MOSFET, 223A Maximum Continuous Drain Current, 74W Maximum Power Dissipation - BSC009NE2LS5ATMA1

This high-performance MOSFET is designed for power management applications, providing exceptional efficiency and reliability. Its optimised characteristics make it suitable for various automation, electronics, and electrical applications. The N-channel configuration and Advanced design facilitate effective management of high current loads while maintaining low on-resistance, making it a preferred choice for modern circuitry.

Features & Benefits

• Supports high current applications with a maximum continuous drain current of 223A

• Very low on-resistance enhances energy efficiency during operation

• Capable of withstanding a maximum drain-source voltage of 25V

• Features a Compact SuperSO8 package for efficient surface mounting

• Delivers effective thermal performance for heat dissipation

• 100% avalanche tested to ensure robust reliability

Applications

• Used in high-performance buck converters for efficient voltage regulation

• Suitable for power management in consumer electronics

• Implemented in automotive where Compact design is Crucial

• Utilised in renewable energy systems for effective power conversion

What is the optimal operating temperature range for installation?

The device operates effectively between -55°C and +150°C, allowing for versatility in various environmental conditions.

Can it be used for synchronous rectification applications?

Yes, the low RDS(on) ensures minimal conduction losses, making it suitable for synchronous rectification.

What handling precautions should be taken during installation?

Standard electrostatic discharge (ESD) precautions should be observed to prevent damage to the MOSFET.

How does the gate charge impact performance?

A typical gate charge of 43nC at 10V helps maintain quick switching speeds, enhancing overall efficiency.

Is this component RoHS compliant?

Yes, it features Pb-free lead plating and is RoHS compliant, aligning with modern environmental standards.