Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1
- RS Stock No.:
- 214-8970
- Mfr. Part No.:
- BSC010N04LSIATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP833.00
(exc. VAT)
PHP932.95
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 4,050 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP166.60 | PHP833.00 |
| 10 - 95 | PHP152.776 | PHP763.88 |
| 100 - 245 | PHP140.89 | PHP704.45 |
| 250 - 495 | PHP130.948 | PHP654.74 |
| 500 + | PHP127.312 | PHP636.56 |
*price indicative
- RS Stock No.:
- 214-8970
- Mfr. Part No.:
- BSC010N04LSIATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 275A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.05mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 139W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Width | 6.1 mm | |
| Height | 1.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 275A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.05mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 139W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Width 6.1 mm | ||
Height 1.2mm | ||
Automotive Standard No | ||
The Infineon New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.
Monolithic integrated Schottky-like diode
Optimized for synchronous rectification
100% avalanche tested
Related links
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOSTM Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7L009ATMA1
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-TDSON-8 FL ISC025N08NM5LF2ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 34 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON