onsemi NTPF Type N-Channel MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-220 NTPF450N80S3Z
- RS Stock No.:
- 214-8915
- Mfr. Part No.:
- NTPF450N80S3Z
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP756.56
(exc. VAT)
PHP847.345
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 1,985 unit(s) shipping from December 29, 2025
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP151.312 | PHP756.56 |
| 10 - 10 | PHP146.774 | PHP733.87 |
| 15 - 15 | PHP137.968 | PHP689.84 |
| 20 - 20 | PHP125.55 | PHP627.75 |
| 25 + | PHP110.484 | PHP552.42 |
*price indicative
- RS Stock No.:
- 214-8915
- Mfr. Part No.:
- NTPF450N80S3Z
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | NTPF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19.3nC | |
| Maximum Power Dissipation Pd | 29.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.53mm | |
| Standards/Approvals | RoHS | |
| Height | 4.83mm | |
| Width | 15.75 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series NTPF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19.3nC | ||
Maximum Power Dissipation Pd 29.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 10.53mm | ||
Standards/Approvals RoHS | ||
Height 4.83mm | ||
Width 15.75 mm | ||
Automotive Standard No | ||
The ON Semiconductor is high performance MOSFET family offering 800 V breakdown voltage. It is optimized for primary switch of fly back converter, enables lower switching losses and case temperature without sacrificing EMI performance.
ESD Improved capability with zener diode
RoHS Compliant
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