Infineon HEXFET Type N-Channel MOSFET, 88 A, 100 V, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

PHP98,739.20

(exc. VAT)

PHP110,588.00

(inc. VAT)

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Units
Per Unit
Per Reel*
800 - 800PHP123.424PHP98,739.20
1600 - 1600PHP118.676PHP94,940.80
2400 +PHP117.175PHP93,740.00

*price indicative

RS Stock No.:
214-4458
Mfr. Part No.:
IRFS4410TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

88A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

200W

Typical Gate Charge Qg @ Vgs

180nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon HEXFET Power MOSFET has improved Gate, Avalanche and Dynamic dv/dt Ruggedness. It is suitable for high efficiency synchronous rectification in SMPS.

It is Halogen-free according to IEC61249-2-21

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