Infineon OptiMOS 3 Type N-Channel MOSFET, 21 A, 150 V Enhancement, 3-Pin TO-252 IPD530N15N3GATMA1

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Subtotal (1 pack of 15 units)*

PHP878.535

(exc. VAT)

PHP983.955

(inc. VAT)

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Units
Per Unit
Per Pack*
15 - 15PHP58.569PHP878.54
30 - 75PHP53.677PHP805.16
90 - 225PHP49.532PHP742.98
240 - 465PHP45.999PHP689.99
480 +PHP44.707PHP670.61

*price indicative

Packaging Options:
RS Stock No.:
214-4381
Mfr. Part No.:
IPD530N15N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-252

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

53mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

68W

Typical Gate Charge Qg @ Vgs

8.7nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

2.35mm

Length

6.65mm

Standards/Approvals

No

Width

6.42 mm

Automotive Standard

No

This Infineon OptiMOS 3 MOSFET is ideal for high-frequency switching and synchronous rectification. It is qualified according to JEDEC for target application

It is Halogen-free according to IEC61249-2-21

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