Infineon OptiMOS 5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 8-Pin HSOF IAUT300N10S5N015ATMA1

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Subtotal (1 pack of 2 units)*

PHP640.97

(exc. VAT)

PHP717.886

(inc. VAT)

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  • 42 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
2 - 8PHP320.485PHP640.97
10 - 98PHP293.945PHP587.89
100 - 248PHP271.305PHP542.61
250 - 498PHP251.79PHP503.58
500 +PHP244.76PHP489.52

*price indicative

Packaging Options:
RS Stock No.:
214-4347
Mfr. Part No.:
IAUT300N10S5N015ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 5

Package Type

HSOF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

166nC

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon OptiMOS MOSFET offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

It is ideal for hot-swap and e-fuse applications

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