Infineon OptiMOS 5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 8-Pin HSOF IAUT300N10S5N015ATMA1

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Subtotal (1 pack of 2 units)*

PHP705.07

(exc. VAT)

PHP789.678

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP352.535PHP705.07
10 - 98PHP323.34PHP646.68
100 - 248PHP298.435PHP596.87
250 - 498PHP276.97PHP553.94
500 +PHP269.235PHP538.47

*price indicative

Packaging Options:
RS Stock No.:
214-4347
Mfr. Part No.:
IAUT300N10S5N015ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

100V

Package Type

HSOF

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

166nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon OptiMOS MOSFET offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

It is ideal for hot-swap and e-fuse applications

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