DiodesZetex Dual DMTH4008LPDWQ 1 N-Channel MOSFET, 46.2 A, 40 V Enhancement, 8-Pin PowerDI5060 DMTH4008LPDWQ-13
- RS Stock No.:
- 213-9248
- Mfr. Part No.:
- DMTH4008LPDWQ-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Subtotal (1 pack of 10 units)*
PHP427.28
(exc. VAT)
PHP478.55
(inc. VAT)
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP42.728 | PHP427.28 |
| 50 - 90 | PHP41.847 | PHP418.47 |
| 100 - 240 | PHP37.387 | PHP373.87 |
| 250 - 990 | PHP36.615 | PHP366.15 |
| 1000 + | PHP29.898 | PHP298.98 |
*price indicative
- RS Stock No.:
- 213-9248
- Mfr. Part No.:
- DMTH4008LPDWQ-13
- Manufacturer:
- DiodesZetex
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | DMTH4008LPDWQ | |
| Package Type | PowerDI5060 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0123Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 900mV | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 39.4W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS, MIL-STD-202, AEC-Q101, J-STD-020, UL 94V-0 | |
| Width | 6.4mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101, AEC-Q200, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series DMTH4008LPDWQ | ||
Package Type PowerDI5060 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0123Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 900mV | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 39.4W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 5.15mm | ||
Standards/Approvals RoHS, MIL-STD-202, AEC-Q101, J-STD-020, UL 94V-0 | ||
Width 6.4mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100 | ||
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