STMicroelectronics SCTL35N65G2V Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin PowerFLAT

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Subtotal 50 units (supplied on a continuous strip)*

PHP54,279.50

(exc. VAT)

PHP60,793.00

(inc. VAT)

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  • Shipping from July 12, 2027
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Units
Per Unit
50 - 99PHP1,085.59
100 - 249PHP1,053.01
250 +PHP1,021.43

*price indicative

Packaging Options:
RS Stock No.:
213-3942P
Mfr. Part No.:
SCTL35N65G2V
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerFLAT

Series

SCTL35N65G2V

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

67mΩ

Channel Mode

Enhancement

Forward Voltage Vf

3.3V

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

417W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

8.1mm

Height

0.95mm

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.

Very fast and robust intrinsic body diode

Low capacitance

Source sensing pin for increased efficiency

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