Vishay SQJB46EP_RC Type N-Channel MOSFET, 60 A, 40 V Enhancement, 4-Pin SO-8 SQJB46EP-T1_GE3
- RS Stock No.:
- 210-5055
- Mfr. Part No.:
- SQJB46EP-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP619.36
(exc. VAT)
PHP693.68
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Supply shortage
- 7,330 left, ready to ship from another location
Our current stock is limited and our suppliers are expecting shortages.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP61.936 | PHP619.36 |
| 20 - 90 | PHP55.743 | PHP557.43 |
| 100 - 490 | PHP50.17 | PHP501.70 |
| 500 - 990 | PHP45.153 | PHP451.53 |
| 1000 + | PHP40.638 | PHP406.38 |
*price indicative
- RS Stock No.:
- 210-5055
- Mfr. Part No.:
- SQJB46EP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SQJB46EP_RC | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Power Dissipation Pd | 34W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 6.25 mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SQJB46EP_RC | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Power Dissipation Pd 34W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 6.25 mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay MOSFET has PowerPAK SO-8L package type.
R-C values for the electrical circuit in the foster/tank and cauer/filter configurations are included
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