Vishay SiSS30ADN Type N-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212
- RS Stock No.:
- 210-5010
- Mfr. Part No.:
- SiSS30ADN-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP116,235.00
(exc. VAT)
PHP130,182.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP38.745 | PHP116,235.00 |
| 6000 + | PHP33.596 | PHP100,788.00 |
*price indicative
- RS Stock No.:
- 210-5010
- Mfr. Part No.:
- SiSS30ADN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 54.7A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK 1212 | |
| Series | SiSS30ADN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19.5nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Height | 0.83mm | |
| Standards/Approvals | No | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 54.7A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK 1212 | ||
Series SiSS30ADN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19.5nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Height 0.83mm | ||
Standards/Approvals No | ||
Width 3.4 mm | ||
Automotive Standard No | ||
The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK 1212-8S package type with 54.7 A drain current.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
Related links
- Vishay SiSS30ADN Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS30ADN-T1-GE3
- Vishay SiSS76LDN Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212
- Vishay ThunderFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiSHA10DN Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiSS30LDN Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiS126DN Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212