Vishay SiRA74DP N-Channel MOSFET, 81.2 A, 40 V Enhancement, 8-Pin SO-8 SiRA74DP-T1-GE3

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Subtotal 20 units (supplied on a continuous strip)*

PHP1,236.52

(exc. VAT)

PHP1,384.90

(inc. VAT)

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  • Plus 5,290 unit(s) shipping from September 14, 2026
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Units
Per Unit
20 - 90PHP61.826
100 - 490PHP55.642
500 - 990PHP50.076
1000 +PHP45.069

*price indicative

Packaging Options:
RS Stock No.:
210-5009P
Mfr. Part No.:
SiRA74DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

81.2A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

SiRA74DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

27nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

46.2W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

5.26mm

Standards/Approvals

No

Height

1.12mm

Length

6.25mm

Automotive Standard

No

The Vishay N-Channel 40 V (D-S) 150 °C MOSFET has PowerPAK SO-8 package type.

TrenchFET Gen IV power MOSFET

Tuned for the lowest RDS-Qoss FOM

100 % Rg and UIS tested

Qgd/Qgs ratio < 1 optimizes switching characteristics

Optimized for wave soldering

Flexible leads increase resilience to board flexing

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