Vishay SiR882BDP N-Channel MOSFET, 67.5 A, 100 V Enhancement, 8-Pin SO-8 SiR882BDP-T1-RE3

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Subtotal 20 units (supplied on a continuous strip)*

PHP1,702.98

(exc. VAT)

PHP1,907.34

(inc. VAT)

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  • Shipping from October 11, 2027
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Units
Per Unit
20 - 90PHP85.149
100 - 490PHP76.636
500 - 990PHP68.972
1000 +PHP62.075

*price indicative

Packaging Options:
RS Stock No.:
210-5007P
Mfr. Part No.:
SiR882BDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

67.5A

Maximum Drain Source Voltage Vds

100V

Series

SiR882BDP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

83.3W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

54nC

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.25mm

Width

5.26mm

Standards/Approvals

No

Height

1.12mm

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET has PowerPAK SO-8 package type.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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