Vishay E N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3

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Subtotal 10 units (supplied on a continuous strip)*

PHP1,409.28

(exc. VAT)

PHP1,578.39

(inc. VAT)

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Units
Per Unit
10 - 95PHP140.928
100 - 495PHP126.834
500 - 995PHP114.144
1000 +PHP102.732

*price indicative

Packaging Options:
RS Stock No.:
210-4979P
Mfr. Part No.:
SIHD11N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

391mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

78W

Typical Gate Charge Qg @ Vgs

28nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Length

9.4mm

Height

2.2mm

Standards/Approvals

RoHS

Width

6.4mm

Automotive Standard

No

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 78W Power Dissipation - SIHD11N80AE-GE3


This power MOSFET is a high-voltage N-channel switching transistor designed for surface-mount power conversion and switching applications. It operates across a very wide temperature span and is intended for demanding environments where high drain-source voltage handling and moderate current capability are required, while conforming to RoHS restrictions.

Features and Benefits:


• 800V drain-source rating enables high-voltage topologies
• 8A continuous drain current supports moderate power circuits
• 391mΩ Rds(on) reduces conduction losses at rated current
• 78W maximum power dissipation allows substantial heat handling
• 28nC typical gate charge gives predictable switching energy
• 30V gate threshold accommodates standard gate-drive voltages

Applications


• Suitable for high-voltage switch-mode power supplies
• Ideal for half-bridge and boost converter stages
• Used with industrial motor-drive front-ends
• Can be used for offline charger and lighting control
• Appropriate for telecoms and power-distribution modules

What package and mounting style does it use?


It is supplied in a TO-252 package intended for surface-mount assembly to ease thermal coupling to PCB copper.

What thermal range can it withstand during operation?


It is rated to operate from -55°C up to 150°C, enabling use in harsh temperature conditions.

How does the forward voltage affect power-loss calculations?


A forward voltage of 1.2V should be included when estimating conduction and switching losses in diode-conducting intervals and synchronous arrangements.

What gate-drive limitations must be observed?


The maximum gate-source voltage is 30V, so gate drivers and protection must prevent excursions beyond this value.

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