Vishay E N-Channel MOSFET, 7.5 A, 800 V Enhancement, 3-Pin TO-220 SIHA21N80AE-GE3

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Subtotal 10 units (supplied in a tube)*

PHP2,343.22

(exc. VAT)

PHP2,624.41

(inc. VAT)

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  • 925 unit(s) shipping from September 14, 2026
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Units
Per Unit
10 - 95PHP234.322
100 - 245PHP220.264
250 - 495PHP200.44
500 +PHP176.384

*price indicative

Packaging Options:
RS Stock No.:
210-4965P
Mfr. Part No.:
SIHA21N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7.5A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

205mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

48nC

Maximum Power Dissipation Pd

33W

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

9.7mm

Length

28.1mm

Height

4.3mm

Automotive Standard

No

The Vishay E Series Power MOSFET has Thin-Lead TO-220 FULLPAK package type with 7.5 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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