Vishay SiDR170DP Type N-Channel MOSFET, 95 A, 100 V Enhancement, 8-Pin SO-8 SiDR170DP-T1-RE3
- RS Stock No.:
- 210-4955
- Mfr. Part No.:
- SiDR170DP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 210-4955
- Mfr. Part No.:
- SiDR170DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiDR170DP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.9 mm | |
| Height | 0.51mm | |
| Length | 5.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiDR170DP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.9 mm | ||
Height 0.51mm | ||
Length 5.9mm | ||
Automotive Standard No | ||
The Vishay N-Channel 100 V (D-S) MOSFET has PowerPAK SO-8DC package type.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
Related links
- Vishay SiDR170DP Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay SiDR392DP Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIDR392DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SiR500DP-T1-RE3
- Vishay SiRA Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SiRA54ADP-T1-RE3
- Vishay SiDR220DP Type N-Channel MOSFET 25 V Enhancement, 8-Pin SO-8 SIDR220DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SiR510DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SiR580DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SiR876BDP-T1-RE3