DiodesZetex DMP1009 Type P-Channel MOSFET, 15 A, 12 V Enhancement, 6-Pin UDFN
- RS Stock No.:
- 206-0106
- Mfr. Part No.:
- DMP1009UFDFQ-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP50,244.00
(exc. VAT)
PHP56,274.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | PHP16.748 | PHP50,244.00 |
| 9000 - 21000 | PHP16.329 | PHP48,987.00 |
| 24000 + | PHP15.921 | PHP47,763.00 |
*price indicative
- RS Stock No.:
- 206-0106
- Mfr. Part No.:
- DMP1009UFDFQ-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | UDFN | |
| Series | DMP1009 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 0.8W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.57mm | |
| Standards/Approvals | No | |
| Width | 1.95 mm | |
| Length | 1.95mm | |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type UDFN | ||
Series DMP1009 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 0.8W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.57mm | ||
Standards/Approvals No | ||
Width 1.95 mm | ||
Length 1.95mm | ||
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 12V N channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive application. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in DC-DC converter and battery management application.
Low on-resistance
Low input capacitance
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