onsemi Power Type N-Channel MOSFET, 150 A, 25 V Enhancement, 8-Pin PQFN NTTFS1D8N02P1E
- RS Stock No.:
- 205-2432
- Mfr. Part No.:
- NTTFS1D8N02P1E
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP1,007.44
(exc. VAT)
PHP1,128.33
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 8,960 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP100.744 | PHP1,007.44 |
| 50 - 90 | PHP97.721 | PHP977.21 |
| 100 - 490 | PHP94.789 | PHP947.89 |
| 500 - 990 | PHP91.945 | PHP919.45 |
| 1000 + | PHP89.187 | PHP891.87 |
*price indicative
- RS Stock No.:
- 205-2432
- Mfr. Part No.:
- NTTFS1D8N02P1E
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | PQFN | |
| Series | Power | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 46W | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.2 mm | |
| Standards/Approvals | RoHS | |
| Length | 3.2mm | |
| Height | 0.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type PQFN | ||
Series Power | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 46W | ||
Maximum Operating Temperature 150°C | ||
Width 3.2 mm | ||
Standards/Approvals RoHS | ||
Length 3.2mm | ||
Height 0.7mm | ||
Automotive Standard No | ||
The ON Semiconductor Power33 series 25V N-Channel MOSFET is produced using advanced process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Maximum drain current rating is 150A
Drain to source resistance rating is 1.3mohm
Small footprint for compact design
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
100% UIL tested
Package is Power 33 (PQFN8)
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