onsemi PowerTrench Type N-Channel MOSFET, 61 A, 150 V Enhancement, 8-Pin PQFN NTMFS015N15MC
- RS Stock No.:
- 205-2430
- Mfr. Part No.:
- NTMFS015N15MC
- Manufacturer:
- onsemi
This image is representative of the product range
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Subtotal (1 pack of 10 units)*
PHP1,442.56
(exc. VAT)
PHP1,615.67
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 9,570 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP144.256 | PHP1,442.56 |
| 50 - 90 | PHP139.929 | PHP1,399.29 |
| 100 - 490 | PHP135.73 | PHP1,357.30 |
| 500 - 990 | PHP131.658 | PHP1,316.58 |
| 1000 + | PHP127.707 | PHP1,277.07 |
*price indicative
- RS Stock No.:
- 205-2430
- Mfr. Part No.:
- NTMFS015N15MC
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | PowerTrench | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 108.7W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.9mm | |
| Width | 4.9 mm | |
| Standards/Approvals | RoHS | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series PowerTrench | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 108.7W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5.9mm | ||
Width 4.9 mm | ||
Standards/Approvals RoHS | ||
Height 0.9mm | ||
Automotive Standard No | ||
The ON Semiconductor Power Trench series 150V N-Channel MOSFET is produced using advanced process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Maximum drain current rating is 61A
Drain to source resistance rating is 14mohm
Small footprint (5mm x 6mm) for compact design
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
100% UIL tested
Package is Power 56 (PQFN8)
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